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- We will tark part in Laser World of Photonics China in 2018
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- We will take part in ILOPE 2017
- Boothnumber:No3.3601Welcomehere.
- 我司將參加第二十二屆北京光電展(ILOPE2017)
- 福建漢光光電有限公司將參加第二十二屆北京光電展(ILOPE2017)。展位號(hào):3601(3號(hào)館)時(shí)間:2017年10月11-13日歡迎屆時(shí)蒞臨展臺(tái)參觀指導(dǎo)。
- We will take part in ILOPE 2016
- WewilltakepartinILOPE2016.Boothnumber:No3.3203Welcomehere.
- 我司將參加第二十一屆北京光電展(ILOPE2016)
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- 2014北京國(guó)際光電產(chǎn)業(yè)博覽會(huì)展位號(hào):4號(hào)館4512參展時(shí)間:2014.10.15-10.17
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- 2014上海慕尼黑光博會(huì)展位號(hào):E1.1546歡迎蒞臨參觀。
- 福建漢光光電圓滿結(jié)束慕尼黑上海光博會(huì)2013
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BBO電光Q開關(guān)
BBO is one of the electro-optic material choices for high average power E-O Q Switch applications. BBO has significant advantages over other materials in terms of laser power handling abilities, temperature stability, and substantial freedom from piezoelectric ringing. Because it relies on the electro optic effect, switching time - aided by the low capacitance of the E-O Q Switch is very fast. The wide transparency range of BBO allows it to be used in diverse applications.
E-O Q Switch of EOQ series are transverse field devices. Low electro-optical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, a smaller aperture device has lower quarter-wave voltage. However, even for 3mm aperture devices quarter-wave voltage is as high as 3.4KV@1064nm. Double crystal design is employed in order to reduce required voltages and allowing operation in half-wave mode with fast switching times.
FEATURES: · High Repetition Rate · High peak power damage resistance · Low absorption · UV Transmission · Low Acoustic Noise |
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Applications: · High repetition rate DPSS Q-Switch · High repetition rate Regenerative Amplifier control · Cavity Dumping · Beam Chopper |
Specifications | Description |
Model Number | EOQ-103 |
Aperture Diameter | 2.5 |
Quarter-Wave Voltage@ 1064 nm | 3.4KV |
Optical Transmission | >98% |
Damage Threshold | > 500 MW / cm2 @1064nm, 10ns |
Wavefront Distortion@ 1064 nm | < λ/8 |
Typical Capacitance | < 3pf |
Outline dimension, mm | φ25.4×44 |